Enhancement of Phosphorus Activation in Vacancy Engineered thin Silicon-on-Insulator Substrates

نویسندگان

  • A J Smith
  • R M Gwilliam
چکیده

A J Smith*, R M Gwilliam and V Stolojan Ion Beam Centre, Advanced Technology Institute, University of Surrey, Guildford, GU2 7XH, United Kingdom. A P Knights Department of Engineering Physics, McMaster University, 1280 Main Street West, Hamilton, Ontario L8S 4L7, Canada. P G Coleman and A Kallis Department of Physics, University of Bath, Bath, BA2 7AY, United Kingdom. S. H. Yeong Dept. of Chemical and Biomolecular Eng., National University of Singapore, 9 Engineering Drive 1, 1175776, Singapore

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تاریخ انتشار 2013